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, March 2015, Pages 297–303
Photoelectrochemical characterization of n-type and p-type thin-film nanocrystalline Cu2ZnSnSe4 photocathodes, , ,
Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan&n- and p-type CZTSe nanocrystals were synthesized by controlling the Zn/Sn ratio.&Photoelectrochemical (PEC) characteristics of resulting electrodes were compared.&n-type CZTSe had higher solar conversion efficiency of 2.81%.&The flat band potential was &0.55 V for n-type CZTSe.&H2 (94.94%) was the main product of n-type CZTSe PEC cells.Copper&zinc&tin&selenide (Cu2ZnSnSe4, CZTSe) nanocrystals that do not contain any toxic elements and are 20&25 nm in size are synthesized through a process involving reactions of the elemental sources in a polyetheramine solution. By controlling the Zn/Sn ratio, both n-type and p-type CZTSe nanocrystals could be synthesized. The photoelectrochemical (PEC) properties of electrodes formed using inks containing n-type and p-type CZTSe nanocrystals are compared. An aqueous solution of NaCl is used as the electrolyte. A PEC cell based on an n-type CZTSe photoanode exhibits an efficiency, ηc, of 2.81%, while a p-type cell exhibits ηc of 0.42%. The flat band potentials of the n-type and p-type CZTSe photoanodes in 1 M NaCl are &0.55 and 0.48 V, respectively. Finally, the net carrier concentrations of the n-type and p-type CZTSe photoanodes, calculated from their Mott&Schottky plots, are 3.38 & 1018 and 2.73 & 1018 cm&3, respectively.KeywordsCu2ZnSnSe4; Photoelectrochemical properties; Photoanodes; Nanocrystals; Inks
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