有体二极管的N-MOS，施加驱动，使其保持导通状态，如果Vds（漏极源极电压）加反向压降；_百度知道
有体二极管的N-MOS，施加驱动，使其保持导通状态，如果Vds（漏极源极电压）加反向压降；
使得源极电压高于漏极电压，那么电流是流过体二极管呢？还是MOS呢？
我有更好的答案
//c.jpg" esrc="http。1：MOS管只要开通后就变成一个内阻很小的开关，不管电流从漏极流向源极还是从源极流向漏极.hiphotos.baidu.com/zhidao/wh%3D600%2C800/sign=53dc2b886d/cbacb78078，都不会影响开能状态：
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我们会通过消息、邮箱等方式尽快将举报结果通知您。N沟道增强型MOS管中假设使VGS大于开启电压,漏源两极的电压VDS开启电压,我不明白后面那两个式子是怎么得到的,我看的
N沟道增强型MOS管中假设使VGS大于开启电压,漏源两极的电压VDS开启电压,我不明白后面那两个式子是怎么得到的,我看的是模拟电子第三版,谁能给讲下
1、UGD=UGS-UDS,这是定义,没有什么好说的.2、第三个式子是从第二个推导出来的.3、整个公式其实是从实验获得,你如果仔细研究一下结型管的数据获得明白了.具体过程是这样的.（1）首先设定UDS为0,然后慢慢增加UGS,等到UGS〉UGS（th）,管子两端只要加微量电流,管子就可以导通,此时沟道形成了.（2）当UGS为大于UGS（th）的某个特定值,然后增加UDS.当UDSUGS-UGS（th）,此时管子的电流就不会随着UDS变化而变化了,基本上维持恒定,只与UGS有关系,UGS越大,电流越大.我不太喜欢用UGD表示,还是用UDS和UGS表示比较直观.模电很多结论一方面是从半导体物理基础研究而来,也有很多是从实验结果获得的. 再问： 可是栅极和漏极怎么联系在一起呢 再答： 就是从夹断角度研究的，UDS逐步增大过程中，UGD逐步减小，靠近漏极的导电沟道开始变窄。从这里可以看出，UGD其实就代表着导电沟道的宽窄变化。 以上这些内容在分析结型管时写得清清楚楚，我用的是童诗白的《模拟电子技术基础》第四版，P41。其实结型管的分析方法与MOSFET非常相似，而且结构更简单一些，两者只是工作原理不同，但在分析工作状态时，手法相当接近。再问： 夹断知道，比较这两个电压能得岀什么？ 再答： 管子的状态啊，MOS管是电压控制器件（这个你应该知道，既然是电压控制器件，不比较电压难道还比较电流不成？），各极之间的电压关系可以反映管子的工作状态（饱和、截止、放大）。这跟三极管用电流表示工作状态不是一样的嘛。三极管的时候，你可以认为，Ic
我有更好的回答：
剩余:2000字
与《N沟道增强型MOS管中假设使VGS大于开启电压,漏源两极的电压VDS开启电压,我不明白后面那两个式子是怎么得到的,我看的》相关的作业问题
没有看过华成英的《帮你学模拟》.但三个不等式中：“uGS>uGS(th）,且uGD＞UGS（th）即uDS＞uGS-UGS（th）”中间的一个错了!应为：uGD
因为在沟道夹断以后,当UDS 逐渐增大时,所增加的电压将主要降落在夹断区（使夹断区有一定的扩展）,而剩余的沟道尺寸基本上不随UDS 的增大而变化,所以通过剩余沟道的电流——也就是输出电流ID基本上不变.注意：沟道夹断不同于不存在沟道!详见“http://blog.163.com/xmx028@126/”中的有关说明.
　　1、防止有电流从衬底流向流向源极和导电沟道,这里是防止衬底与源极的PN结导通,导通了的话,就会有电流从衬底的低掺杂的P型硅片流向源极的高掺杂N+区.2、将衬底与源极相连接,两者的电位就相同了,没有正向压降,两者间的PN结就不会导通,从而就不会有电流流过PN结.3、也可以不连接衬底与源极,但是要保证衬—源之间电压U（
因为场效晶体管的输入电阻rGS是很高的,比RG1或RG2都高得多,三者并联后可将rGS略去.显然,由于RG1和RG2的接入使放大电路的输入电阻降低了.因此,通常在分压点和栅极之间接入一个阻值较高的电阻RG,这样就大大提高了放大电路的输入电阻.图见这里http://www.dz3w.com/pic/.47
从结构上看,N沟道耗尽型MOS管与N沟道增强型MOS管基本相似,其区别仅在于栅－源极间电压vGS=0时,耗尽型MOS管中的漏－源极间已有导电沟道产生,而增强
要知道 导电本质是电子的移动 你可以这样理解 Vgs=0时不导电,可以利用pn解释为空间电荷区在外电场作用下加宽阻碍了电子的运动那么在沟道被空穴填满是情况更加不乐观了 高浓度的空穴会加快与N+区得电子中和 ,从而形成更宽的耗尽层 电子移动更加困难 在沟道里充满电子的情况是呢?衬底里的空穴被排斥,电子被吸引 这是可以认为
这部分其实在模电书里面写得很清楚了,只是你要反复看书,这部分内容是需要悟出来的.当UGS从0开始,逐步增大（UGS〉0）的时候,G极会积聚正电荷,而S与衬底B其实是连在一起的,也就是负极,这时候,衬底里面的空穴（带正电）会被G排斥,逐步远离G极,这样在衬底（P区）里面就形成了以不能移动的负离子为主的耗尽层.当UGS增大
增强型比较清楚：1、P沟道增强型：当UgsUgs(th)时,开启.这个Ugs(th)是一个正数值,最常见的是在2V 4V之间.耗尽型的管子比较少见.1、P沟道耗尽型：当UgsUgs(off)时导通,这个Ugs(off)是一个负数值.
NMOS增强型,ugs(th)一般是正数,最常见的是在2-4V之间,正常导通时的UGS一定大于Ugs(th),因此也一定是一个正数.耗尽型的不称为ugs(th),而是ugs(off),也就是夹断电压,这个值通常是一个负数.也就是说,只要UGS>UGS(off)就可以导通,这个数值就不好说了,可以是负数,也可以是0,也可
1.N沟道MOS管与P沟道MOS管工作原理相似,不同之处仅在于它们形成电流的载流子性质不同,因此导致加在各极上的电压极性相反. 应用得最多的是N沟道增强型MOS管 2.N沟道增强型MOS管的工作原理:http://www.edacn.net/html/27/.htmlhttp://www.8ttt8
不好意思,这个不是我的专业,不过我想你只要在网上随便搜索一下,就可以找到很多
几种那么多我是不知道,我有用过一个你可以试用A03460参数你可以网上查下,有很多 再问： 哥们没有啊。，A03460 百度一搜啥都没有 详细点啊 再答： 百度搜是有点问题，不过百度不太喜欢别人搞外链，截个网址的给你看吧
栅极和源极、栅极和漏极之间的电阻几乎可以算无穷大,而源漏极之间的电阻则要看场效应管的类型、型号和外加电压,加电压和不加电压会不同,电压高和电压低也会不同,同样的电压增强型和耗尽型场效应管也会不同,同样是增强型或耗尽型,型号不同,电阻值也会不一样,不会都有一个同样的阻值.
N沟道MOS管也就是说S、D为N+区,其沟道为N型,即为电子.N沟道耗尽型MOS管是MOS管不需要工作电压就有了导电沟道,而P型增强型MOS管则是需要一定的电压才能反型.作为N沟道耗尽型MOS管,在制造过程中,S、D之间的衬底表面形成了导电沟道,其原因就是往沟道区域注入了磷离子或砷离子,一般来说是磷离子,砷离子常被用来
源漏互换了.其实一个mos管物理实现上是不区分源漏的,两边完全对称,只有外加电压后才有源漏一说. 再问： 能不能说具体点啊， 你的意思是 外家栅源电压后， 漏源才有区分，那假如是N沟道的话，只能是漏源电压正，才可以有电流是吧 再答： 是的，但是你那样说是不准确的。只要源漏间有压降，沟道就会有电流，而电流的方向又决定了提
1. 源极和衬底连接是MOS管的一种用法.两者相连时相当于pn结（衬底-源）上接零电压,pn结耗尽区中漂移流与扩散流平衡,pn结上总电流为零.2. 栅源不加电压时,沟道不开启,不会有漏源电流.漏-衬底-源寄生三极管无电流的原因是：在正常工作条件下,衬底（寄生三极管基区）电势最低,因此寄生三极管亦无电流.3. 当漏极电压
只有第④个是假命题,其他都是真命题④若α、β相交,a,b不一定相交.还有异面的情况看图吧 再问： 你这画的不是②的情况吗？ 再答： 这个图也符合（4）啊再问： 那2、4不都是假命题了吗 再答： 这个图不符合（4），我举例子把（4）驳倒即可，也就是举反例 (2)是真命题，你能举反例推到（2）吗？，不然你试试 注意：垂直包
为了提高MOS管的电气特性,尤其是耐压和耐电流能力,功率MOSFET大都采用垂直导电结构,又称为VMOSFET（Vertical&MOSFET）,其具体工作原理为（参见下图）：截止：漏源极间加正电源,栅源极间电压为零.P基区与N漂移区之间形成的PN结J1反偏,漏源极之间无电流流过.导电：在栅源极间加正电压UG
1层虽然看起来像很多层,实际上每个细胞都是生长于基底膜上的.所以只是一层细胞当前位置： >>
20V6A场效应管P沟道MOS管
DTC2059P-Channel 20 V (D-S) MOSFETPRODUCT SUMMARYVDS (V) - 20 RDS(on) (Ω) 0.075 at VGS = - 4.5 V 0.081 at VGS = - 3.6 V 0.090 at VGS = - 2.5 V ID (A) - 6.6a - 6a - 6aSFEATURESQg (Typ.) 12.5 nC? Halogen-free According to IEC
Definition ? TrenchFET? Power MOSFET ? 100 % Rg Tested ? Compliant to RoHS Directive 2002/95/ECAPPLICATIONS? Portable Devices - Load Switch - Charger Switch - Battery Switch - DC/DC ConverterDGDGDSP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 20 ± 12 - 6.6 a - 6a - 6a, b, c - 5.2b, c - 20 - 4.8 - 1.9b, c 5.7 3 2.3b, c 1.2b, c - 55 to 150 260 °C W A Unit VTHERMAL RESISTANCE RATINGSParameter Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface mounted on 1& x 1& FR4 board. t≤5s Steady State Symbol RthJA RthJF Typical 45 18 Maximum 55 22 Unit °C/W1DTC2059SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = - 5.2 A, dI/dt = 100 A/?s, TJ = 25 °C IS = - 5.2 A, VGS = 0 V - 0.8 20 10 10 10 TC = 25 °C -6 - 20 - 1.2 40 20 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = - 10 V, RL = - 1.9 Ω ID ? - 5.2 A, VGEN = - 10 V, Rg = 1 Ω VDD = - 10 V, RL = 1.9 Ω ID ? - 5.2 A, VGEN = - 4.5 V, Rg = 1 Ω f = 1 MHz 0.9 VDS = - 10 V, VGS = - 10 V, ID = - 6.5 A VDS = - 10 V, VGS = - 4.5 V, ID = - 6.5 A VDS = - 10 V, VGS = 0 V, f = 1 MHz
25 12.5 2 4 4.6 25 20 30 12 10 10 27 12 9.2 50 40 60 25 20 20 55 25 ns Ω 38 19 nC pF VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = - 250 ?A ID = - 250 ?A VDS = VGS, ID = - 250 ?A VDS = 0 V, VGS = ± 12 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 85 °C VDS ≤ - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 4.9 A VGS = - 3.6 V, ID = - 4.6 A VGS = - 2.5 V, ID = - 2.0 A VDS = - 10 V, ID = - 4.9 A - 20 0.060 0.076 0.083 16 0.075 0.081 0.090 S Ω - 0.6 - 20 - 14 3.2 - 1.4 ± 100 -1 -5 V mV/°C V nA ?A A Symbol Test Conditions Min. Typ. Max. UnitNotes: a. P pulse width ≤ 300 ?s, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.2DTC2059TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)20 V GS = 5 V thru 3 V 16ID - Drain Current (A) ID - Drain Current (A)5 V GS = 2.5 V 41238V GS = 2 V2 T C = 25 °C 14 V GS = 1.5 V 0 0 0.5 1.0 1.5 2.0 2.5 3.0T C = 125 °C 0 0 0.5 1.0 T C = - 55 °C 1.5 2.0VDS - Drain-to-Source Voltage (V)VGS - Gate-to-Source Voltage (V)Output Characteristics0.08 V GS = 2.5 V 1500RDS(on) - On-Resistance (Ω)Transfer Characteristics18000.06C - Capacitance (pF)1200Ciss0.04 V GS = 3.6 V900600 Coss 300 Crss0.02V GS = 4.5 V0 0 4 8 12 16 200 0 3 6 9 12ID - Drain Current (A)VDS - Drain-to-Source Voltage (V)On Resistance vs. Drain Current10 ID = 6.5 AVGS - Gate-to-Source Voltage (V)Capacitance1.6 V GS = 4.5 V; 3.6 V; I D = 4.9 A 1.4RDS(on) - On-Resistance8 V DS = 10 V 6 V DS = 5 V V DS = 16 V 4(Normalized)1.2 V GS = 2.5 V; I D = 2 A 1.020.80 0 5 10 15 20 25 300.6 - 50- 250255075100125150Qg - Total Gate Charge (nC)TJ - Junction Temperature (°C)Gate ChargeOn-Resistance vs. Junction Temperature3DTC2059TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)100 0.12 ID = 4.9 A 0.10IS - Source Current (A) RDS(on) - On-Resistance (Ω)T J = 150 °C 100.080.06 T J = 125 °C 0.04 T J = 25 °C 0.021T J = 25 °C0.1 0 0.2 0.4 0.6 0.8 1.0 1.20 0 1 2 3 4 5VSD - Source-to-Drain Voltage (V)VGS - Gate-to-Source Voltage (V)Forward Diode Voltage vs. Temperature1.2 1.140 50On-Resistance vs. Gate-to-Source Voltage1.0 ID = 250 μA 0.9 0.8 0.710 Power (W) VGS(th) (V) 30200.6 0.5 - 500 10-3- 25025507510012515010-210-11 Time (s)10100600TJ - Temperature (°C)Threshold Voltage100 Limited by RDS(on) * 10ID - Drain Current (A)Single Pulse Power1 ms 1 10 ms 100 ms 1s 10 s DC BVDSS Limited0.1 TA = 25 °C Single Pulse 0.01 0.1110100VDS - Drain-to-Source Voltage (V) * VGS & minimum VGS at which RDS(on) is specifiedSafe Operating Area, Junction-to-Ambient4DTC2059TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)12 65 9ID - Drain Current (A)4 Package Limited 6 Power (W) 75 100 125 15032 3 10 0 25 500 25 50 75 100 125 150TC - Case Temperature (°C)TC - Case Temperature (°C)Current Derating*Power Derating* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.5DTC2059TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.50.2Notes:0.1 0.1 0.05t1 PDM0.02t1 t2 2. Per Unit Base = R thJA = 95 °C/Wt2 1. Duty Cycle, D =Single Pulse 0.01 10-4 10-3 10-2 10-1 13. T JM - TA = PDMZthJA(t) 4. Surface Mounted10100600Square Wave Pulse Duration (s)Normalized Thermal Transient Impedance, Junction-to-Ambient2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.50.2 0.1 0.1 0.05 0.02Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s)Normalized Thermal Transient Impedance, Junction-to-Foot63DFNDJH,QIRUPDWLRQPackage outline - SOT89D D1 C AHEE1L B B1 e e1DIM A B B1 C D D1Millimeters Min 1.40 0.44 0.36 0.35 4.40 1.62 Max 1.60 0.56 0.48 0.44 4.60 1.83Inches Min 0.550 0.017 0.014 0.014 0.173 0.064 Max 0.630 0.022 0.019 0.017 0.181 0.072DIM E E1 e e1 H LMillimeters Min 2.29 2.13 Max 2.60 2.29Inches Min 0.090 0.084 Max 0.102 0.0901.50 BSC 3.00 BSC 3.94 0.89 4.25 1.200.059 BSC 0.118 BSC 0.155 0.035 0.167 0.047Note: Controlling dimensions are in millimeters. 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definition. We confirm that all the products identified as being compliant to IEC
conform to JEDEC JS709A standards.1DTC2059P-Channel 20 V (D-S) MOSFETPRODUCT SUMMARYVDS (V) - 20 RDS(on) (Ω) 0.075 at VGS = - 4.5 V 0.081 at VGS = - 3.6 V 0.090 at VGS = - 2.5 V ID (A) - 6.6a - 6a - 6aSFEATURESQg (Typ.) 12.5 nC? Halogen-free According to IEC
Definition ? TrenchFET? Power MOSFET ? 100 % Rg Tested ? Compliant to RoHS Directive 2002/95/ECAPPLICATIONS? Portable Devices - Load Switch - Charger Switch - Battery Switch - DC/DC ConverterDGDGDSP-Channel MOSFET
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